Part # FCB11N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCB11N60 600V N-Channel MOSF

Part Details:

FC July 2005 B11 SuperFETTM N60 FCB11N60 600V N 600V N-Channel MOSFET -C Features Description hanne · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge · Typ . RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and l · Ultra low gate charge (typ. Q lower gate charge performance. M g = 40nC) O · Low effective output capacitance (typ. Coss.eff = 95pF) This advanced technology has been tailored to minimize con- SFE duction loss, provide superior switching performance, and with- · 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. T Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for system min-iaturization and higher efficiency. D D G G S S Absolute Maximum Ratings Symbol Parameter FCB11N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 11 A - Continuous (TC = 100°C) 7 A IDM Drain Current - Pulsed

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FCB11N60.pdf Datasheet