Part # FDC6321C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC6321C Dual N & P Channel , Digital F

Part Details:

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode N-Ch 25 V, 0.68 A, R = 0.45 @ V = 4.5 V DS(ON) GS field effect transistors are produced using Fairchild sproprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, R = 1.1 @ V = -4.5 V. DS(ON) GS high density process is especially tailored to minimize Very low level gate drive requirements allowing direct on-state resistance. This device has been designed operation in 3 V circuits. V < 1.0V. especially for low voltage applications as a replacement for GS(th) digital transistors in load switching applications. Since bias Gate-Source Zener for ESD ruggedness. resistors are not required this dual digital FET can replace >6kV Human Body Model several digital transistors with different bias resistors. Replace multiple dual NPN & PNP digital transistors. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOIC-16 SOT-223 Mark:.321 D2 S1 4 3 D1 5 2 G2 S2 SuperSOT -6 TM G1 6 1 Absolute Maximum Ratings T = 25oC unless other wise noted A Symbol Parameter

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FDC6321C.pdf Datasheet