Part # FQD13N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD13N10 FQU13N10 100V N-Channel MOSF


Part Details:

FQD13N10 January 2001 QFETTM / FQD13N10 / FQU13N10 FQU13 100V N-Channel MOSFET General Description Features N10 These N-Channel enhancement mode power field effect · 10A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 12 nC) planar stripe, DMOS technology. · Low Crss ( typical 20 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD13N10 / FQU13N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 10 A - Continuous (TC = 100°C)


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FQD13N10.pdf Datasheet