Part # 4N38M datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers

Part Details:

H11D1M, September 2007 H11D2M, H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M tm High Voltage Phototransistor Optocouplers H11D3M, Features General Description High voltage: The H11DXM, 4N38M and MOC8204M are photo- ­ MOC8204M, BV transistor-type optically coupled optoisolators. A gallium CER = 400V ­ H11D1M, H11D2M, BV arsenide infrared emitting diode is coupled with a high CER = 300V 4N38M, voltage NPN silicon phototransistor. The device is sup- ­ H11D3M, BVCER = 200V plied in a standard plastic six-pin dual-in-line package. High isolation voltage: ­ 7500 VAC peak, 1 second MOC8204M High Underwriters Laboratory (UL) recognized File # E90700, Volume 2 Applications Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems V Industrial controls olta ge Phototransistor Optocoupler Schematic ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER s ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 H11D1M, Absolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. H11D2M, In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter

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4N38M.pdf Datasheet