Part # FQB4P25 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB4P25 FQI4P25 250V P-Channel MOSF

Part Details:

FQB4P December 2000 25 / QFETTM F FQB4P25 / FQI4P25 QI4P 250V P-Channel MOSFET 25 General Description Features These P-Channel enhancement mode power field effect · -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 10 nC) planar stripe, DMOS technology. · Low Crss ( typical 10.3 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices arewell suited for high efficiency switching DC/DC converters. S D ! G ! ! G S D2-PAK I2-PAK G D S FQB Series FQI Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB4P25 / FQI4P25 Units VDSS Drain-Source Voltage -250 V ID Drain Current - Continuous (TC = 25°C) -4.0 A

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FQB4P25.pdf Datasheet