Part # FQB33N10L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB33N10L FQI33N10L 100V LOGIC N-Channel MOSF

Part Details:

September 2000 3N10L QFETTM FQB33N10L / FQI33N10L100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 30 nC) FQB33N10L / FQI3 planar stripe, DMOS technology. · Low Crss ( typical 70 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as high efficiencyswitching DC/DC converters, and DC motor control. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB33N10L / FQI33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 33 A - Continuous (TC = 100°C)

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FQB33N10L.pdf Datasheet