Part # IRF630B datasheet

Part Manufacturer: Motorola


Part Description: RF630B IRFS630B 200V N-Channel MOSF

Part Details:

IRF630B/I RF IRF630B/IRFS630B S630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 22 nC) planar, DMOS technology. · Low Crss ( typical 22 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supply and motor control. D G TO-220 TO-220F G D S IRF Series G D S IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF630B IRFS630B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 9.0 9.0 * A - Continuous (TC = 100°C) 5.7 5.7 * A IDM Drain Current - Pulsed (Note 1) 36 36 *

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IRF630B.pdf Datasheet