Part # BCV26 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: BCV26 PNP Darlington Transistor

Part Details:

BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V 3 VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BCV26 PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RJA Thermal Resistance, Junction to Ambient 357 °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

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BCV26.pdf Datasheet