Part # HUF75307T3ST datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HUF75307T3ST 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSF

Part Details:

HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET · 2.6A , 55V This N-Channel power MOSFET is · Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative UltraFET® process. This advanced · Diode Exhibits Both High Speed and Soft Recovery process technology achieves the · Temperature Compensating PSPICE® Model lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of · Thermal Impedance SPICE Model withstanding high energy in the avalanche mode and the · Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored · UIS Rating Curve charge. It was designed for use in applications where power efficiency is important, such as switching regulators, · Related Literature switching converters, motor drivers, relay drivers, low- - TB334, "Guidelines for Soldering Surface Mount voltage bus switches, and power management in portable Components to PC Boards" and battery-operated products. Symbol Formerly developmental type TA75307. D Ordering Information PART NUMBER PACKAGE BRAND G HUF75307T3ST SOT-223 5307 NOTE: HUF75307T3ST is available only in tape and reel. S Packaging SOT-223 DRAIN (FLANGE) GATE DRAIN SOURCE Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild Semiconductor Corporation HUF75307T3ST Rev. B HUF75307T3ST Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

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HUF75307T3ST.pdf Datasheet