Part # FQA44N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA44N10 100V N-Channel MOSF

Part Details:

FQA44N10 December 2000 QFETTM FQA44N10100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 48 nC) planar stripe, DMOS technology. · Low Crss ( typical 85 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · 175°C maximum junction temperature rating well suited for low voltage applications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor control. D ! " ! " G ! " ! " TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA44N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 48 A - Continuous (TC = 100°C) 34 A IDM Drain Current - Pulsed (Note 1)

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FQA44N10.pdf Datasheet