Part # 2SC3669 datasheet

Part Manufacturer: Toshiba


Part Description: Toshiba

Part Details:

2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · High-speed switching: tstg = 500 ns (typ.) · Complementary to 2SA1680 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A Collector power dissipation PC 900 mW JEDEC TO-92MOD Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current ICBO VCB = 80 V, IE = 0 1.0 µA

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2SC3669.pdf Datasheet