Part # FDC6000NZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSF


Part Details:

FDC6000NZ June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged · 6.5 A, 20 V R gate version of Fairchild s Semiconductor s advanced DS(ON) = 20 m @ VGS = 4.5 V PowerTrench process. It has been optimized for power RDS(ON) = 28 m @ VGS = 2.5 V management applications with a wide range of gate drive voltage (2.5V ­ 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are · ESD protection diode (note 3) optimized for battery power management applications. · High performance trench technology for extremely Applications low RDS(ON) · Battery management/Charger Application · Load switch · FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact S2 4 3 S1 G1 G2 5 2 S2 6 1 S1 SuperSOT O -6TM -6 FLMP Bottom Drain Contact MOSFET Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS


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FDC6000NZ.pdf Datasheet