Part # 2SC3665 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


Part Details:

2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 1000 mW · High-speed switching: tstg = 1.0 µ (typ.) · Complementary to 2SA1428. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC Collector power dissipation PC 1000 mW JEITA Junction temperature Tj 150 °C TOSHIBA 2-7D101A Storage temperature range Tstg -55 to 150 °C Weight: 0.2 g (typ.) 1 2004-07-07 2SC3668 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current


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2SC3665.pdf Datasheet