Part # FDG361N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG361N N-Channel 100V Specified PowerTrench MOSF

Part Details:

FDG361 August 2001 N FDG361NN-Channel 100V Specified PowerTrenchMOSFET General Description Features These N-Channel 100V specified MOSFETs are · 0.6 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V produced using Fairchild Semiconductor s advancedPowerTrench process that has been especially tailored RDS(ON)= 550 m @ VGS = 6.0 V to minimize on-state resistance and yet maintain low · Low gate charge (3.7nC typical) gate charge for superior switching performance. · Fast switching speed These devices have been designed to offer exceptionalpower dissipation in a very small footprint for · High performance trench technology for extremely applications where the bigger more expensive SO-8and TSSOP-8 packages are impractical. low RDS(ON) Applications · Load switch· Battery protection· Power management S D 1 6 D 2 5 G D Pin 1 D 3 4 SC70-6 Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current ­ Continuous (Note 1a) 0.6 A ­ Pulsed 2.0

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FDG361N.pdf Datasheet