Part # 2N5307 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5307

Part Details:

2N53 07 2N5307 NPN General Purpose Amplifier· This device designed for applications requiring extremely high current gain at currents to 1.0A. · Sourced from Process 05.· See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N53 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units 07 Off CharacteristicsBV(BR)CEO Col ector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V

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2N5307.pdf Datasheet