Part # FJX3012R datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FJX3012R NPN Epitaxial Silicon Transistor


Part Details:

FJX3 012R FJX3012R Switching Application (Bias Resistor Built In)· Switching circuit, Inverter, Interface circuit, Driver Circuit 3 · Built in bias Resistor (R=47K)· Complement to FJX4012R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C S12 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min.


Please click the following link to download the datasheet:

FJX3012R.pdf Datasheet