Part # FDN342P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: sot23n.tstT65.T65

Part Details:

FDN342P August 1999 FDN342PP-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. R = 0.08 @ V = -4.5 V DS(ON) GS a rugged gate version of Fairchild Semiconductor s R = 0.13 @ V = -2.5 V. DS(ON) GS advanced PowerTrench process. It has been optimized for power management applications for a wide range Rugged gate rating (±12V). of gate drive voltages (2.5V - 12V). High performance trench technology for extremely low R . DS(ON) Applications Load switch Enhanced power SuperSOTTM-3 (SOT-23). Battery protection Power management D D S TM G SuperSOT -3 G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Drain Current - Continuous (Note 1a) -2

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FDN342P.pdf Datasheet