Part # FQA9N90C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA9N90C 900V N-Channel MOSF

Part Details:

FQA9N90C 900V N-Cha July 2007 QFET ® FQA9N90C 900V N-Channel MOSFET Features Description · 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect n · Low gate charge ( typical 45 nC) transistors are produced using Fairchild s proprietary, planar nel MOS · Low Crss ( typical 14pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for high FET efficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D G TO-3P G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA9N90C Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 9.0 A - Continuous (TC = 100°C) 5.7 A IDM Drain Current - Pulsed (Note 1) 36 A VGSS Gate-Source Voltage ± 30 V

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FQA9N90C.pdf Datasheet