Part # STY60NM60 datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: N-channel 600V - 0.050 Ω - 60A Max247 Zener-protected MDmesh™ Power MOSF

Part Details:

STY60NM60 N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STY60NM60 600V < 0.055 60 A TYPICAL RDS(on) = 0.050HIGH dv/dt AND AVALANCHE CAPABILITIESIMPROVED ESD CAPABILITYLOW INPUT CAPACITANCE AND GATE 3 2 CHARGE 1 LOW GATE INPUT RESISTANCETIGHT PROCESS CONTROLINDUSTRY S LOWEST ON-RESISTANCE Max247 DESCRIPTIONThe MDmeshTM is a new revolutionary MOSFETtechnology that associates the Multiple Drain pro-cess with the Company s PowerMESHTM horizontallayout. The resulting product has an outstanding lowon-resistance, impressively high dv/dt and excellent INTERNAL SCHEMATIC DIAGRAM avalanche characteristics. The adoption of theCompany s proprietary strip technique yields overalldynamic performance that is significantly better thanthat of similar competition s products. APPLICATIONSThe MDmeshTM family is very suitable for increasingpower density of high voltage converters allowingsystem miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STY60NM60 Y60NM60 Max247 TUBE July 2003 1/8 STY60NM60 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 60

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STY60NM60.pdf Datasheet