Part # FQB6N80 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB6N80 FQI6N80 800V N-Channel MOSF

Part Details:

80 September 2000 I6N FQ QFETTM FQB6N80 / FQI6N80800V N-Channel MOSFET B6N80 /FQ General Description Features These N-Channel enhancement mode power field effect · 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 31 nC) planar stripe, DMOS technology. · Low Crss ( typical 14 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " 3 5 G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB6N80 / FQI6N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 5.8 A - Continuous (TC = 100°C)

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FQB6N80.pdf Datasheet