Part # M58LT128GSB M58LT128GST datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V supply Secure Flash memories


Part Details:

M58LT128GST M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V supply Secure Flash memories Features Summary Supply voltage­ V BGA DD = 1.7 to 2.0V for program, erase and read ­ VDDQ = 2.7 to 3.6V for I/O Buffers­ VPP = 9V for fast program TBGA64 (ZA) Synchronous / Asynchronous Read­ Random Access: 110ns 10 x 13mm ­ Asynchronous Page Read: 25ns.­ Synchronous Burst Read: 52MHz 100,000 program/erase cycles per block Synchronous Burst Read Suspend Electronic signature Programming time ­ Manufacturer Code: 20h ­ 10µs typical Word program time using Buffer Enhanced Factory Program ­ Device Code: command M58LT128GST: 88C6hM58LT128GSB: 88C7h Memory organization ECOPACK® package available ­ Multiple Bank Memory Array: 8 Mbit Banks ­ Parameter Blocks (Top or Bottom location) Dual operations­ program/erase in one Bank while read in others ­ No delay between read and write operations Hardware protection­ All Blocks Write Protected when V PP VPPLK Security­ Software Security Features­ 64-bit Unique Device Identifier­ 2112 bits of User-Programmable OTP memory Common Flash Interface (CFI) January 2006 Rev. 2 1/97 1


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M58LT128GSB M58LT128GST.pdf Datasheet