Part # RN4601 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)


Part Details:

RN4608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4608 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Includeing two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 22k R2: 47k (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25°C) JEDEC Characteristic Symbol Rating Unit EIAJ Collector-base voltage VCBO -50 V TOSHIBA 2-3N1A Collector-emitter voltage VCEO -50 V Weight: 0.015g Emitter-base voltage VEBO -7 V Collector current IC -100 mA Q2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current


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RN4601.pdf Datasheet