Part # FQB8N60CF datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB8N60CF 600V N-Channel MOSF


Part Details:

FQB8N6 December 2005 FRFETTM 0CF 60 FQB8N60CF600V N-Channel MOSFET 0V N-Channe Features Description · 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild s proprietary, planar stripe, · Low gate charge ( typical 28nC) DMOS technology. · Low Crss ( typical 12pF) This advanced technology has been especially tailored to mini- l MOSFE · Fas t switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi- · Improved dv/dt capability ciency switched mode power supplies, electronic lamp ballastsbased on half bridge topology. T D D G G S D2-PAKFQB Series S Absolute Maximum Ratings Symbol Parameter FQB8N60CF Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 6.26 A - Continuous (TC = 100°C) 3.96 A IDM Drain Current - Pulsed (Note 1) 25 A VGSS Gate-Source Voltage ± 30 V


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FQB8N60CF.pdf Datasheet