Part # FDB12N50TM datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDB12N50 FDI12N50 N-Channel MOSF

Part Details:

FDB12N50 / FDI12N June 2007 UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description 50 N-Channel MOSFET · RDS(on) = 0.55 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar · Low gate charge ( Typ. 22nC) stripe, DMOS technology. · Low Crss ( Typ. 12pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche · 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor · Improved dv/dt capability correction. · RoHS compliant D % G D2-PAK I2-PAK G S FDB Series G D S FDI Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±30 V -Continuous (T I C = 25oC) 11.5 D Drain Current A

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FDB12N50TM.pdf Datasheet