Part # FQA85N06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA85N06 60V N-Channel MOSF

Part Details:

FQA85N06 May 2001 QFETTM FQA85N0660V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 100A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 86 nC) planar stripe, DMOS technology. · Low Crss ( typical 165 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. D ! " ! " G ! " ! " TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA85N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 100 A - Continuous (TC = 100°C) 71 A IDM Drain Current - Pulsed (Note 1)

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FQA85N06.pdf Datasheet