Part # RFP12N10L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: RFP12N10L 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSF


Part Details:

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET · 12A, 100V These are N-Channel enhancement mode silicon gate · rDS(ON) = 0.200 power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as · Design Optimized for 5V Gate Drives programmable controllers, automotive switching and · Can be Driven Directly from QMOS, NMOS, solenoid drivers. This performance is accomplished through TTL Circuits a special gate oxide design which provides full rated · Compatible with Automotive Drive Requirements conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit · SOA is Power-Dissipation Limited supply voltages. · Nanosecond Switching Speeds Formerly developmental type TA09526. · Linear Transfer Characteristics · High Input Impedance Ordering Information · Majority Carrier Device PART NUMBER PACKAGE BRAND RFP12N10L TO-220AB F12N10L · Related Literature - TB334 "Guidelines for Soldering Surface Mount NOTE: When ordering, include the entire part number. Components to PC Boards Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN DRAIN GATE (TAB) ©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. B1 RFP12N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12N10L UNITS


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RFP12N10L.pdf Datasheet