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Part Manufacturer: Fairchild Semiconductor

Part Description: FJN3304R NPN Epitaxial Silicon Transistor

Part Details:

FJN330 4R FJN3304R Switching Application (Bias Resistor Built In)· Switching circuit, Inverter, Interface circuit Driver Circuit,· Built in bias Resistor (R1=47K, R2=47K) · Complement to FJN4304R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units Equivalent Circuit C VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V R1 VEBO Emitter-Base Voltage 10 V B IC Collector Current 100 mA P R2 C Collector Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C E Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max.

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