Part # 2SA1013 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


Part Details:

2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage : VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -6 V DC IC -2 Collector current A Pulsed (Note 1) ICP -4 Base current IB -2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA Junction temperature Tj 150 °C TOSHIBA 2-5J1A Storage temperature range Tstg -55 to 150 °C Weight: 0.36 g (typ.) Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test


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2SA1013.pdf Datasheet