Part # FQA70N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA70N10 100V N-Channel MOSF

Part Details:

10 August 2000 0N7AQ QFETTM F FQA70N10100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 70A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 85 nC) planar stripe, DMOS technology. · Low Crss ( typical 150 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D ! " ! " G ! " ! " TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA70N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 70 A - Continuous (TC = 100°C) 49.5 A IDM Drain Current

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FQA70N10.pdf Datasheet