Part # FQB6N40CF datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB6N40CF 400V N-Channel MOSF

Part Details:

FQ December 2005 B6N40CF 400V FRFETTM FQB6N40CF400V N-Channel MOSFET N-Cha Features Description · 6A, 400V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar nnel MOS · Low gate charge ( typical 16nC) stripe, DMOS technology. · Low Crss ( typical 15pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche · 100% avalanche tested and commutation mode. These devices are well suited for high FET · Improved dv/dt capability efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. · Fast recovery body diode (typical 70ns) D D G G S D2-PAKFQB Series S Absolute Maximum Ratings Symbol Parameter FQB6N40CF Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 6 A - Continuous (TC = 100°C) 3.8 A IDM Drain Current - Pulsed (Note 1) 24 A VGSS Gate-Source Voltage

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FQB6N40CF.pdf Datasheet