Part # KSB834W datasheet

Part Manufacturer: Motorola


Part Description: KSB834W PNP Silicon Epitaxial Transistor

Part Details:

KSB834 W KSB834W Low Frequency Power Amplifier· Complement to KSD880W 1 D2-PAK 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current - 3 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25°C) 30 W PC Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max.

Please click the following link to download the datasheet:

KSB834W.pdf Datasheet