Part # 1N5711 datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics


Part Details:

1N5711 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break-down, low turn-on voltage and ultrafast switching.Primarly intended for high level UHF/VHF detec-tion and pulse application with broad dynamicrange. Matched batches are available on request DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 70 V IF Forward Continuous Current* Ta = 25°C 15 mA Ptot Power Dissipation* Ta = 25°C 430 mW Tstg Storage and Junction Temperature Range - 65 to 200 °C Tj - 65 to 200 TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 °C from Case THERMAL RESISTANCE Symbol Test Conditions Value Unit Rth(j-a) Junction-ambient* 400 °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tamb = 25°C

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1N5711.pdf Datasheet