Part # 2SC5029 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


Part Details:

2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Industrial Applications Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) · High collector power dissipation: PC = 1.3 W · High-speed switching: tstg = 1.0 µs (typ.) · Complementary to 2SA1892 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Base current IB 0.2 A JEDEC Collector power dissipation PC 1.3 W Junction temperature T JEITA j 150 °C Storage temperature range Tstg TOSHIBA 2-8M1A -55 to 150 °C Weight: 0.55 g (typ.) 1 2004-07-07 2SC5029 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test


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2SC5029.pdf Datasheet