Part # FDS6162N3 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS6162N3 20V N-Channel PowerTrench® MOSF


Part Details:

FDS6162N3 May 2003 FDS6162N3 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 21 A, 20 V R specifically to improve the overall efficiency of DC/DC DS(ON) = 4.5 m @ VGS = 4.5 V converters using either synchronous or conventional RDS(ON) = 6.0 m @ VGS = 2.5 V switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an · High performance trench technology for extremely extremely low RDS(ON) in a small package. low RDS(ON) Applications · High power and current handling capability · Synchronous rectifier · Fast switching · DC/DC converter · FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current ­ Continuous (Note 1a) 21 A ­


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FDS6162N3.pdf Datasheet