Part # 2N3859A datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N3859A NPN General Purpose Amplifier

Part Details:

2N38 59A 2N3859A NPN General Purpose Amplifier· This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. · Sourced from Process 10.· See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off CharacteristicsBV(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 60 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 60 V BV(BR)EBO Emitter-Base Breakdown Voltage

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2N3859A.pdf Datasheet