Part # 2SC2500 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: Toshiba


Part Details:

2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Unit: mm Medium-Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage V VCEO 10 Emitter-base voltage VEBO 6 V DC IC 2 Collector current Pulsed A JEDEC TO-92MOD ICP 5 (Note 1) JEITA Base current IB 0.5 A TOSHIBA 2-5J1A Collector power dissipation PC 900 mW Weight: 0.36 g (typ.) Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C


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2SC2500.pdf Datasheet