Part # FDG6318PZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG6318PZ Dual P-Channel, Digital F

Part Details:

FDG January 2003 6318PZ FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode · -0.5A, -20V. rDS(ON) = 780m (Max)@ VGS = -4.5 V MOSFET are produced using Fairchild Semiconductor s rDS(ON) = 1200m (Max) @ VGS = -2.5 V especially tailored to minimize on-state resistance. Thisdevice has been designed especially for bipolar digital · Very low level gate drive requirements allowing direct transistors and small signal MOSFETS operation in 3V circuits (VGS(TH) < 1.5V). Applications · Gate-Source Zener for ESD ruggedness (>1.4kV Human Body Model). · Battery management · Compact industry standard SC-70-6 surface mount package. S G S 1 or 4 6 or 3 D D G 2 or 5 5 or 2 G D G Pin 1 S D 3 or 6 4 or 1 S SC70-6 The pinouts are symmetrical; pin1 and pin 4 are interchangeable. MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±12 V Drain Current Continuous (T -0.5 A I C = 25oC, VGS = - 4.5V) D Continuous (TC = 100oC, VGS = - 2.5V)

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FDG6318PZ.pdf Datasheet