Part # FQD17P06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD17P06 FQU17P06 60V P-Channel MOSF

Part Details:

FQD17P May 2001 QFETTM 06 / FQU17P06 FQD17P06 / FQU17P0660V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect · -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 21 nC) planar stripe, DMOS technology. · Low Crss ( typical 80 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices arewell suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. S! D G ! ! D-PAK I-PAK G S FQD Series G D S FQU Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD17P06 / FQU17P06 Units VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -12 A - Continuous (TC = 100°C) -7.6 A IDM Drain Current

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FQD17P06.pdf Datasheet