Part # IRFP254B datasheet

Part Manufacturer: Motorola


Part Description: RFP254B 250V N-Channel MOSF

Part Details:

IRF November 2001 P254B IRFP254B250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 25A, 250V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 95 nC) planar, DMOS technology. · Low Crss ( typical 60 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies. D ! G! ! TO-3P S G D S IRFP Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFP254B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 25 A - Continuous (TC = 100°C) 15.9 A IDM Drain Current - Pulsed (Note 1) 100 A

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IRFP254B.pdf Datasheet