Part # HUFA75337S3S datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HUFA75337G3, HUFA75337P3, HUFA75337S3S 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs


Part Details:

HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs · 75A, 55V These N-Channel power MOSFETs · Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABERTM innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, Available on the web at: www.fairchildsemi.com resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the · Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored · UIS Rating Curve charge. It was designed for use in applications where power efficiency is important, such as switching regulators, · Related Literature switching converters, motor drivers, relay drivers, low- - TB334, "Guidelines for Soldering Surface Mount voltage bus switches, and power management in portable Components to PC Boards" and battery-operated products. Symbol Formerly developmental type TA75337. D Ordering Information PART NUMBER PACKAGE BRAND G HUFA75337G3 TO-247 75337G HUFA75337P3 TO-220AB 75337P S HUFA75337S3S TO-263AB 75337S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75337S3ST. Packaging JEDEC STYLE TO-247 JEDEC TO-220AB SOURCE SOURCE DRAIN DRAIN GATE


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HUFA75337S3S.pdf Datasheet