Part # FQA19N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA19N60 600V N-Channel MOSF

Part Details:

60 April 2000 9N1AQ QFETTM F FQA19N60600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 70 nC) planar stripe, DMOS technology. · Low Crss ( typical 35 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D ! " ! " G ! " ! " ! TO-3P S G D S FQA Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA19N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 18.5 A - Continuous (TC = 100°C) 11.7 A IDM Drain Current - Pulsed (Note 1)

Please click the following link to download the datasheet:

FQA19N60.pdf Datasheet