Part # FQD20N06L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD20N06L FQU20N06L 60V LOGIC N-Channel MOSF


Part Details:

FQD20N06 May 2001 QFETTM L FQD20N06L / FQU20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. · Low Crss ( typical 35 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 150oC maximum junction temperature rating suited for low voltage applications such as automotive, DC/ · Low level gate drive requirements allowing direct DC converters, and high efficiency switching for power operation form logic drivers management in portable and battery operated products. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD20N06L / FQU20N06L Units VDSS Drain-Source Voltage 60 V ID


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FQD20N06L.pdf Datasheet