Part # 2N3819 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description:


Part Details:

2N38 19 2N3819 N-Channel RF Amplifier· This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. · Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off CharacteristicsV(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 25 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 2.0 nA VGS(off)


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2N3819.pdf Datasheet