Part # FDS3512 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS3512 80V N-Channel PowerTrench MOSF


Part Details:

FDS3512 May 2001 FDS3512 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed · 4.0 A, 80 V R specifically to improve the overall efficiency of DC/DC DS(ON) = 70 m @ VGS = 10 V converters using either synchronous or conventional RDS(ON) = 80 m @ VGS = 6 V switching PWM controllers. · Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · Fast switching speed RDS(ON) specifications. · High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power low RDS(ON) supply designs with higher overall efficiency. · High power and current handling capability D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage


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FDS3512.pdf Datasheet