Part # FGD2N40L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FGD2N40L 400V N- Channel Logic Level IGB

Part Details:

FGD2N40L 400V N-Ch March 2006 FGD2N40L400V N-Channel Logic Level IGBTFeatures General Description V This N-Channel IGBT is a MOS gated, logic level device CE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V annel Lo 6kV ESD Protected which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode. High Peak Current DensityTO-252 (D-Pak) gic Level IGBT Low VGE(TH) Applications Small Engine Ignition Applications ©2006 Fairchild Semiconductor Corporation 1 FGD2N40L Rev. A FG Device Maximum Ratings T D2N40L 400V N-Ch A= 25°C unless otherwise noted Symbol Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage 400 V IC Collector Current Continuous(DC) 7 A ICP Collector Current Pulsed(100µs) 29 A VGES Gate to Emitter Voltage Continuous(DC) ±8 V VGEP Gate to Emitter Voltage Pulsed ±10 V PD Power Dissipation Total TC = 25oC 29 W TJ Operating Junction Temperature Range

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FGD2N40L.pdf Datasheet