Part # FQB3P20 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB3P20 FQI3P20 200V P-Channel MOSF

Part Details:

0 April 2000 I3P2 QFETTM / FQ FQB3P20 / FQI3P20200V P-Channel MOSFET B3P20FQ General Description Features These P-Channel enhancement mode power field effect · -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. · Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters. D S! G ! G S D2-PAK I2-PAK G D S FQB Series FQI Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB3P20 / FQI3P20 Units VDSS Drain-Source Voltage -200 V ID Drain Current - Continuous (TC = 25°C) -2.8 A - Continuous (TC = 100°C) -1.77 A

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FQB3P20.pdf Datasheet