Part # 2SC3709A datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Part Details:

2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm · Low collector saturation voltage: VCE (sat) = 0.4 V (max) · High-speed switching: tstg = 1.0 µs (typ.) · Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A Collector power dissipation PC 30 W (Tc = 25°C) JEDEC Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-10R1A Electrical Characteristics (Tc = 25°C) Weight: 1.7 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current ICBO VCB = 80 V, IE = 0 10 µA Emitter cut-off current

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2SC3709A.pdf Datasheet