Part # FQA11N90_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA11N90 FQA11N90_F109 900V N-Channel MOSF


Part Details:

FQA1 September 2007 1N90 / FQA1 QFET ® FQA11N90 / FQA11N90_F109900V N-Channel MOSFET 1N90_F109 Features Description · 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 72 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 30pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to 90 · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalanche 0V N-Channe · RoHS compliant and commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. D l MOSFE G T TO-3P G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA11N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 11.4 A - Continuous (TC = 100°C) 7.2 A IDM Drain Current - Pulsed (Note 1) 45.6 A


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FQA11N90_F109.pdf Datasheet