Part # FCA16N60_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCA16N60 FCA16N60_F109 600V N-Channel MOSF

Part Details:

FCA16N60 / FCA16N60_F109 August 2007 SuperFETTM FCA16N60 / FCA16N60_F109600V N-Channel MOSFET Features Description · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge · Typ. Rds(on)=0.22 balance mechanism for outstanding low on-resistance and · Ultra low gate charge (typ. Qg=55nC) lower gate charge performance. This advanced technology has been tailored to minimize 600V N-Ch · Low effective output capacitance (typ. Coss.eff=110pF) conduction loss, provide superior switching performance, and · 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for systemminiaturization and higher efficiency. annel MOSFET D G TO-3P G D S FCA Series S Absolute Maximum Ratings Symbol Parameter FCA16N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 16 A - Continuous (TC = 100°C) 10.1 A IDM Drain Current - Pulsed (Note 1) 48 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 450

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FCA16N60_F109.pdf Datasheet