Part # 2SC3474 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type

Part Details:

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit: mm Solenoid Drive Applications · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Ta = 25°C 1.0 Collector power P W dissipation C Tc = 25°C 20 Junction temperature T j 150 °C Storage temperature range T JEDEC stg -55 to 150 °C JEITA TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC

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2SC3474.pdf Datasheet